HT82P604B データシートの表示（PDF） - Holtek Semiconductor

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HT82P604B

DC-DC Converter

Holtek Semiconductor 

Preliminary

HT82P604B

Pin No. Pin Name

12

PGOOD

13

PHASE

14

UGATE

15

BOOT

16

PGND

17

LGATE

18

VCC

19

OVP

20

RT

I/O

Description

PGOOD is an open collector output used to indicate the status of

the converter output voltage. This pin is pulled low when the

O

converter output is not within ±10% of the DACOUT reference

voltage. Exception to this behavivor is the ¢11111¢ VID pin com-

bination which disables the converter; in this case, PGOOD as-

serts a high level.

Connect the PHASE pin to the upper MOSFET source. This pin

O

is used to monitor the voltage drop across the MOSFET for

over-current protection. This pin also provides the return path

for the upper gate drive.

O

Connect UGATE to the upper MOSFET gate. This pin provides

the gate drive for the upper MOSFET.

This pin provides bias voltage to the upper MOSFET driver. A

I bootstrap circuit may be used to create a BOOT voltage suitable

to drive a standard N-Channel MOSFET.

P

This is the power ground connection. Tie the lower MOSFET

source to this pin.

O

Connect LGATE to the lower MOSFET gate. This pin provides

the gate drive for the lower MOSFET.

P Provide a 12V bias supply for the chip to this pin.

O

The OVP pin can be used to drive an external SCR in the event

of an overvoltage condition.

This pin provides oscillator switching frequency adjustment. By

placing a resistor (RT) from this pin to GND, the nominal

200kHz switching frequency is increased.

I

FS

»

200kHz

+

5 ´106

R T (kW)

(RT to GND)

Conversely, connecting a pull-up resistor (RT) from this pin to

VCC reduces the switching frequency.

FS

»

200kHz

+

4 ´107

R T (kW)

(RT to 12V)

Absolute Maximum Ratings

Supply Voltage ......................................... +15V

Input Voltage ............... GND-0.3 to VCC+0.3V

Storage Temperature ............... -50°C to 125°C

Operating Temperature ............ -20°C to 75°C

Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maxi-

mum Ratings² may cause substantial damage to the device. Functional operation of this device

at other conditions beyond those listed in the specification is not implied and prolonged expo-

sure to extreme conditions may affect device reliability.

3

March 23, 2000

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