HT82P604B データシートの表示（PDF） - Holtek Semiconductor
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HT82P604B Datasheet PDF : 7 Pages
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Preliminary
HT82P604B
Electrical Characteristics
Symbol
Parameter
VCC Supply Current
ICC
Nominal Supply
Test Conditions
VCC
Conditions
Min. Typ. Max. Unit
12V Ugate and Lgate Open ¾ 5 ¾ mA
Power-On Reset
Rising VCC Threshold
12V VOCSET=4.5V
¾ ¾ 10.4 V
Falling VCC Threshold
Rising VOCSET Threshold
Oscillator
12V VOCSET=4.5V
12V
8.2 ¾ ¾ V
¾ 1.26 ¾ V
Free Running Frequency 12V RT=Open
185 200 215 kHz
Total Variation
12V 6kW<RT to GND<200kW -15 ¾ +15 %
DVOSC Ramp Amplitude
Reference and DAC
12V RT=Open
¾ 1.9 ¾ VP-P
DACOUT Voltage Accuracy 12V
-1.0 ¾ +1.0 %
ERROR Amplifier
DC Gain
12V
¾ 88 ¾ dB
GBW Gain-Bandwidth Product 12V
¾ 15 ¾ MHz
SR
Slew Rate
12V COMP=10pF
¾ 6 ¾ V/ms
Gate Drivers
IUGATE Upper Gate Source
RUGATE Upper Gate Sink
ILGATE Lower Gate Source
RLGATE Lower Gate Sink
Protection
12V
VBOOT-VPHASE=12V,
VUGATE=6V
12V ILGATE=0.3A
12V VCC=12V, VLGATE=6V
12V ILGATE=0.3V
350 500 ¾ mA
¾ 5.5 10 W
300 450 ¾ mA
¾ 3.5 6.5 W
IOCSET
Over-Voltage Trip
(VSEN/DACOUT)
OCSET Current Source
12V
12V VOCSET=4.5VDC
¾ 115 120 %
170 200 230 mA
IOVP
OVP Sourcing Current
ISS
Soft Start Current
Power Good
12V VSEN=5.5, VOVP=0V
12V
60 ¾ ¾ mA
¾ 10 ¾ mA
Upper Threshold
(VSEN/DACOUT)
12V VSEN Rising
106 ¾ 111 %
4
March 22, 2000
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