UPG100B データシートの表示（PDF） - NEC => Renesas Technology
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UPG100B Datasheet PDF : 4 Pages
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LOW NOISE UPG100B
WIDE-BAND AMPLIFIER UPG100P
FEATURES
• ULTRA WIDE BAND: 50 MHz to 3 GHz
• LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz
• INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω
• HERMETIC SEALED PACKAGE ASSURES HIGH
RELIABILITY
• WIDE OPERATING TEMPERATURE RANGE
DESCRIPTION
The UPG100 is a GaAs monolithic integrated circuit designed
as a low noise amplifier from 50 MHz to 3 GHz. This device
is suitable for low noise IF gain stages in microwave commu-
nication and measurement equipment.
POWER GAIN AND NOISE FIGURE
vs. FREQUENCY
20
10
GP
VDD = +5 V,
VGG = -5 V
TA = -25˚C
TA = +25˚C
10
TA = +75˚C
5
NF
0
0
10 20 50 100 200 500 1000
5000
Frequency, f (MHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C, VDD = +5V, VGG = -5 V, f = 0.05 to 3 GHz, Zs = ZL = 50 Ω)
SYMBOLS
IDD
IGG
GP
∆GL
NF
P1dB
RLIN
RLOUT
ISOL
RTH (CH-C)
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Drain Bias Current (RF off)
Gate Bias Current (RF off)
Power Gain
Flatness Gain
Noise Figure
Output Power at 1 dB gain compression point
Input Return Loss
Output Return Loss
Isolation
Thermal Resistance (Channel to Case)
UNITS
mA
mA
dB
dB
dB
dBm
dB
dB
dB
°C/W
UPG100B, UPG100P
B08, CHIP
MIN
TYP
MAX
30
45
60
0.7
1.5
14
16
±1.5
2.7
3.5
+3
+6
7
10
7
10
30
40
33
California Eastern Laboratories
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