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UPG2015TB データシートの表示(PDF) - NEC => Renesas Technology

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UPG2015TB
NEC
NEC => Renesas Technology NEC
UPG2015TB Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2015TB
L, S-BAND SPDT SWITCH
DESCRIPTION
The µPG2015TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which were developed
for mobile phone and another L, S-band application.
This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface
mounting.
FEATURES
• Supply voltage
• Switch control voltage
• Low insertion loss
• High isolation
• Middle power
• High-density surface mounting
: VDD = 2.7 to 3.0 V (2.8 V TYP.)
: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)
: Vcont (L) = 0.2 to +0.2 V (0 V TYP.)
: LINS1 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: LINS2 = 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: LINS3 = 0.35 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: ISL1 = 27 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: ISL2 = 24 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: Pin(0.1 dB) = +27.0 dBm TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATIONS
• L-band digital cellular or cordless telephone
• PCS, W-LAN, WLL and BluetoothTM etc.
ORDERING INFORMATION
Part Number
µPG2015TB-E3
Package
6-pin super minimold
Marking
G3J
Supplying Form
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2015TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10356EJ02V0DS (2nd edition)
Date Published August 2003 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices 2003

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