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UT2301L データシートの表示(PDF) - Unisonic Technologies

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UT2301L Datasheet PDF : 5 Pages
1 2 3 4 5
UT2301
TYPICAL CHARACTERISTICS (Cont.)
1
D=0.5
Transient Thermal Impedance
Power MOSFET
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Duration (sec)
-2 Drain Current vs. Source to Drain Voltage
Drain-Source On-State Resistance Characteristics
-6
-1.5
-5
-4
VGS=-4.5V,
-1
-3
ID=-2.8A
-2
VGS=-2.5V
-0.5
ID=-2A
-1
0
0
-0.2 -0.4
-0.6 -0.8
-1
Source to Drain Voltage, VSD (V)
Drain Current vs. Gate Threshold
-300
Voltage
-250
-200
-150
-100
-50
0
0
-0.2
-0.4
-0.6
-0.8
Gate Threshold Voltage, VTH (V)
0
0
-0.1
-0.2
-0.3
-0.4
-0.5
Drain to Source Voltage, VDS (V)
-500
-400
-350
Drain Current vs. Drain-Source
Breakdown Voltage
-300
-250
-200
-150
-100
-50
00
-10
-20
-30 -40 -50
Drain-Source Breakdown Voltage, BVDSS(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-118.K

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