UT2301ZG データシートの表示（PDF） - Unisonic Technologies

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UT2301ZG

-2.8A, -20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Unisonic Technologies 

UT2301Z

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

Gate-Source Voltage

VDS

-20

V

VGS

±8

V

Continuous Drain Current

Pulsed Drain Current (Note 2, 3)

ID

-2.8

A

IDM

-10

A

Total Power Dissipation (Note 4)

Junction Temperature

PD

1.25

W

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature.

3. Pulse width ≤300µs, duty cycle ≤ 2 %.

4. Surface mounted on 1 in 2 copper pad of FR4 board.

 THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATING

Junction to Ambient

θJA

100

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

 ELECTRICAL CHARACTERISTICS (ID=-2.3A , TA=25°C, unless otherwise specified)

UNIT

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

BVDSS

IDSS

IGSS

VGS=0V, ID=-250uA

VDS=-16V, VGS=0V

VGS=±8V, VDS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

On-State Drain Current

Forward Tran conductance

VGS(TH)

RDS(ON)

ID(ON)

gFS

VDS=VGS, ID=-250uA

VGS=-4.5V, ID=-2.8A

VGS=-2.5V, ID=-2.0A

VDS=-5 V, VGS=-10V

VDS=-5 V, ID=-2.8A

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VGS=0V, VDS=-6V, f=1.0MHz

SWITCHING CHARACTERISTICS

Total Gate Charge (Note)

Gate-Source Charge

Gate-Drain Charge

Turn-ON Delay Time (Note)

Turn-ON Rise Time

Turn-OFF Delay Time

Turn-OFF Fall Time

QG

QGS

QGD

tD(ON)

tR

tD(OFF)

tF

VDS=-6V, VGS=-4.5V,

ID=-2.8A

VDD=-6V, VGEN=-4.5V,

ID=-1A, RG=6Ω, RL=6Ω

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Diode Forward Current

IS

Diode Forward Voltage (Note)

VSD IS=-1.6 A, VGS=0 V

Notes: Pulse width ≤300µs, Duty Cycle ≤2%

MIN

-20

-0.45

-6

TYP

95

122

6.5

447

127

80

5.4

0.8

1.1

5

19

95

65

-0.8

MAX UNITS

V

-1.0 μA

±5 μA

V

130 mΩ

190 mΩ

A

S

pF

pF

pF

10 nC

nC

nC

25 ns

60 ns

110 ns

80 ns

-1.6 A

-1.2 V

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R502-281.J

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