VP2206N3 データシートの表示（PDF） - Supertex Inc

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VP2206N3

P-Channel Enhancement-Mode Vertical DMOS FET

Supertex Inc 

Typical Performance Curves (cont.)

BVDSS Variation with Temperature

1.1

1.0

0.9

-50

0

50

100

150

Tj (OC)

Transfer Characteristics

-10

VDS = -25V

-8.0

-6.0

TA = -55OC

25OC

-4.0

125OC

-2.0

0

0

-2.0

-4.0

-6.0

-8.0

-10

VGS (volts)

Capacitance vs. Drain-to-Source Voltage

400

f = 1.0MHz

CISS

300

200

100

00

COSS

CRSS

-10

-20

-30

-40

VDS (volts)

VP2206

On-Resistance vs. Drain Current

5.0

VGS = -5.0V

4.0

3.0

2.0

VGS = -10V

1.0

0

0

-2.0

-4.0

-6.0

-8.0

-10

ID (amperes)

V(th) and RDS Variation with Temperature

1.2

2.0

RDS(ON) @ -10V, -3.5A

1.1

1.6

1.0

1.2

0.9

0.8

V(th) @ -1.0mA

0.8

0.4

0.7

-50

0

0

50

100

150

Tj (OC)

Gate Drive Dynamic Characteristics

-10

-8.0

VDS = -10V

VDS = -40V

-6.0

725 pF

-4.0

-2.0

310 pF

00

2.0

4.0

6.0

8.0

10

QG (nanocoulombs)

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

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