VSC7958 データシートの表示（PDF） - Vitesse Semiconductor
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VSC7958
Vitesse Semiconductor
VSC7958 Datasheet PDF : 8 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
2.5Gb/s High Speed Limiting Post Amplifier
for OC-48/SDH-16 Applications
Preliminary Data Sheet
VSC7958
Table 1: Electrical Specifications
All min and max values are tested at VSS = -4.5V and -5.5V, unless otherwise noted. All min and max values are guaranteed from
TCASE = 0°C to 85°C, unless otherwise noted.
Symbol
Parameter
Min Typ Max Units
Conditions
VIN±(1)
(VIN+) - (VIN-)(1)
(VREF+) - (VREF-)
Input Voltage Swing
Input Voltage Swing
Input Offset Voltage Swing
(VOUT+) - (VOUT -) Output Voltage Swing
-
-
800 mVp-p Single-ended source
-
-
1600 mVp-p Differential source
-
10
25
mV VIN = 0
Differential Output Swing.
320 500 1200 mVp-p VIN = 8mV, Differential
Input peak-to-peak
VOFFSET
PW%
Output DC Offset Voltage
Output Pulse Width
-
-0.5
-
90 100 110
V Measured to ground
%
tR, tF
G
fMAX(1)
fMIN(1)
S11(1)
S22(1)
ISS
NF(1)
Rise and Fall Time
Small Signal Gain
Small Signal -3dB Bandwidth
Low Frequency -3dB Cutoff
Input Return Loss Reference to 50Ω
Output Return Loss Reference to 50Ω
Supply Current
Noise Figure
-
100
-
26
30
45
ps
20%-80%, 25°C,
VIN = 50mV
dB
VIN = 4mVp-p single-
ended
-
3
-
GHz 25°C, VIN = 4mVp-p
-
30
-
kHz 25°C, VIN = 4mVp-p
-
15
-
dB At 1.5GHz
-
15
-
dB At 1.5GHz
-
80 100 mA
-
15
-
dB 8kHz to 18GHz
VNR(1)
Input Referred Wide Band Noise
Total single-ended output
-
170
-
µVrms
noise voltage divided by
small-signal gain. 8kHz to
18GHz
θJC
Thermal Resistance
-
30
-
°C/W Junction-to-case
NOTE:(1) These values are not measured during production test. These values are results of engineering characterization.
Page 2
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52184-0, Rev 3.0
05/14/01
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