VSC7969 データシートの表示（PDF） - Vitesse Semiconductor

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VSC7969

3.125Gb/s Integrated Transimpedance and Limiting Amplifier with Signal Detect

Vitesse Semiconductor 

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7969

3.125Gb/s Integrated Transimpedance

and Limiting Amplifier with Signal Detect

Symbol

Parameter

Min Typ Max Units

Conditions

MON

Slope of Linear Analog Photocurrent

Monitor vs Input Optical Power

0.8

µA/µW

0Ω to 2kΩ to VCC with a detector

responsitivity of 0.8A/W

DC

Duty Cycle

-5

+5

%

IMONRANGE Photocurrent Monitor Linearity Range 5

IMONOFFSET Photocurrent Monitor Offset

0

RJ

Random Jitter(2)

DJ

Deterministic Jitter(3)

200

10

TBD

TBD

µA

µA

ps Peak-to-peak

ps Peak-to-peak

NOTES: (1) The transimpedance gain is defined as ZT = (∆VOUT - DIFF)/∆IPH. (2) Using 1111100000 pattern at 2.5Gb/s to measure the

standard deviation of the edge of the pattern, multiply the standard deviation by 14 to achieve the total random jitter. (3) +K28.5

- K28.5 (00111110101100000101).

Table 2: DC Specifications

Symbol

Parameter

Min Typ

GND

VCCS

VCCD

ICC

VOUT-CM

VANODE

VCATHODE

VCAT-EXT

VAPD

Negative Supply Rail

Positive Supply Rail for 3.3V Operation 3.0

Positive Supply Rail for 5V Operation 4.5

Power Supply Current

Common-Mode Voltage on Output Pins

Internal DC Bias Voltage on Detector

Anode Contact

Interal DC Bias Voltage on Detector

Cathode Contact

External DC Bias Voltage Permissable

on Detector Cathode Contact

External DC Bias Voltage for Use with

Avalanche Photodetector

0.8

VCCS -

0.15V

0

3.3

5.0

65

VCCS -

125mV

0.9

3.3

60

Max

3.6

5.5

75

1.0

VCCS

10

Units

Conditions

V

V

V

mA 3.3V

Applicable to VOUTP and

VOUTN pins at 50Ω load.

V

V

V

V

Absolute Maximum Ratings(1) (at TA = +25°C, unless otherwise specified)

Power Supply Voltage (VCCS)......................................................................................................................... 3.6V

Power Supply Voltage (VCCD) ........................................................................................................................ 5.5V

Junction Temperature Range ........................................................................................................ -40°C to +125°C

Storage Temperature Range ......................................................................................................... -40°C to +125°C

Relative Ambient Humidity ................................................................................................................. 85%/+85°C

NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus-

ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended

periods may affect device reliability.

Recommended Operating Conditions

Positive Voltage Supply (VCCS) ...................................................................................................................... 3.3V

Positive Voltage Supply (VCCD)...................................................................................................................... 5.0V

Negative Voltage Rail (GND) ............................................................................................................................ 0V

Ambient Temperature Range (TA)(1).............................................................................................. -40°C to +85°C

G52355-0, Rev 2.0

02/09/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

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