VSKJ236(2008) データシートの表示（PDF） - Vishay Semiconductors
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VSKJ236
(Rev.:2008)
(Rev.:2008)
Vishay Semiconductors
VSKJ236 Datasheet PDF : 11 Pages
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VSK.166, .196, .236..PbF Series
Vishay High Power Products Standard Recovery Diodes, 165 A to 230 A
(New INT-A-PAK Power Modules)
4000
3500
3000
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
2500
2000
1500
VSK.166.. Series
1000
1
10
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
4000
3500
3000
2500
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
2000
1500
1000
VSK.166.. Series
500
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
300
250
200
150
100
50
0
0
300
DC
250
200
0.50K.4/WK/W 0.3 K/W
0.7 K/W
150
100
VSK.166.. Series
Per junction
TJ = 150 °C
50
100
150
200
250
50
0
0
25 50 75 100 125 150
Total RMS Output Current (A)
Maximum Allowable Ambient
Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1800
1800
1600
1400
1200
1000
800
600
400
200
0
0
~
100
180°
+
(Sine)
180°
- (Rect)
2 x VSK.166.. Series
Single phase bridge
Connected
TJ = 150 °C
200
300
400
500
1600
1400
1200
1000
800
600
400
200
R
thSA =
00.0.064KK/W/W
0.12
K/W
-
ΔR
0.1 K/W
0.16 K/W
0.25 K/W
0.5 K/W
0
0
25
50
75
100 125 150
Total Output Current (A)
Maximum Allowable Ambient
Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94357
Revision: 22-Apr-08
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