DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

VSKJ236-12PBF データシートの表示(PDF) - Vishay Semiconductors

部品番号
コンポーネント説明
メーカー
VSKJ236-12PBF Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors
(INT-A-PAK Power Modules)
1800
1800
1600
~
1400
1200
1000
800
600
400
200
0
0
100
+
120°
-
(Rect)
3 x VSK.196.. Series
Three phase bridge
Connected
TJ = 150 °C
200 300 400 500 600
1600
1400
1200
1000
800
600
400
200
0.06
0.08
K/W
K/W
0.12
0.16
K/W
K/W
0.25 K/W
0.4 K/W
0
0
25
50
75 100 125 150
Total Output Current (A)
Fig. 18 - On-State Power Loss Characteristics
Maximum Allowable Ambient
Temperature (°C)
160
VSK.236.. Series
150
RthJC (DC) = 0.14 K/W
140
130
Ø
Conduction angle
120
110
100
90
80
0
30°
60°
90°
120° 180°
50
100
150
200
250
Average Forward Current (A)
Fig. 19 - Current Ratings Characteristics
350
180°
300
120°
90°
60°
250
30°
200
RMS limit
150
Ø
Conduction angle
100
VSK.236.. Series
50
TJ = 150 °C
0
0
50
100
150
200
250
Average Forward Current (A)
Fig. 21 - On-State Power Loss Characteristics
150
VSK.236.. Series
140
RthJC (DC) = 0.14 K/W
130
Ø
120
Conduction period
110
100
90
80
70
0
30°
60°
90°
120°
180° DC
50 100 150 200 250 300 350 400
Average Forward Current (A)
Fig. 20 - Current Ratings Characteristics
450
DC
400
180°
120°
350
90°
300
60°
30°
250
RMS limit
200
Ø
150
Conduction period
100
50
0
0
VSK.236.. Series
Per junction
TJ = 150 °C
50 100 150 200 250 300 350 400
Average Forward Current (A)
Fig. 22 - On-State Power Loss Characteristics
Document Number: 94357 For technical questions within your region, please contact one of the following:
Revision: 20-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
7

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]