W45NM60 データシートの表示（PDF） - STMicroelectronics

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W45NM60

N-channel 650V@Tjmax - 0.09Ω- 45A - TO-247 MDmesh™ Power MOSFET

STMicroelectronics 

STW45NM60

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VGS

ID

ID

IDM (1)

PTOT

dv/dt (2)

Gate- source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

Peak diode recovery voltage slope

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Pulse width limited by safe operating area

2. ISD < 45A, di/dt < 400A/µs, VDD < 80% V(BR)DSS

Table 2. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case

Rthj-amb Thermal resistance junction-amb

Tl

Maximum lead temperature for soldering purpose

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj = 25 °C, ID = IAR, VDD = 35 V)

Electrical ratings

Value

±30

45

28

180

417

3.33

15

–65 to 150

150

Unit

V

A

A

A

W

W/°C

V/ns

°C

°C

Value

0.3

30

300

Unit

°C/W

°C/W

°C

Max value

Unit

15

A

850

mJ

3/12

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