WCMB2016R4X-FF70 データシートの表示（PDF） - Weida Semiconductor, Inc.

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WCMB2016R4X-FF70

128K x 16 Static RAM

Weida Semiconductor, Inc. 

Switching Waveforms

WCMB2016R4X

[12, 13]

Read Cycle No. 1(Address Transition Controlled)

tRC

ADDRESS

DATA OUT

tAA

tOHA

PREVIOUS DATA VALID

[13, 14]

Read Cycle No. 2 (OE Controlled)

DATA VALID

ADDRESS

CE

OE

BHE/BLE

tRC

tACE

tDOE

tLZOE

DATA OUT

VCC

SUPPLY

CURRENT

tDBE

tLZBE

HIGH IMPEDANCE

tLZCE

tPU

50%

DATA VALID

tPD

tHZCE

tHZOE

tHZBE

HIGH

IMPEDANCE

ICC

50%

ISB

Notes:

12. Device is continuously selected. OE, CE = VIL, BHE and/or BLE = VIL.

13. WE is HIGH for read cycle.

14. Address valid prior to or coincident with CE, BHE, BLE, transition LOW.

6

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