WFP730 データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFP730 Datasheet PDF : 7 Pages
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Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
Gate−source breakdown voltage
V(BR)GSS
IG = ±10 μA, VDS = 0 V
Drain cut−off current
IDSS
VDS = 400 V, VGS = 0 V
Drain−source breakdown voltage
V(BR)DSS
Break Voltage Temperature
ΔBVDSS/
Coefficient
ΔTJ
Gate threshold voltage
VGS(th)
Drain−source ON resistance
RDS(ON)
Forward Transconductance
gfs
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn−on time
ton
Fall time
tf
Switching time
Turn−off time
toff
Total gate charge (gate−source
Qg
plus gate−drain)
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
ID = 250 μA, VGS = 0 V
ID=250μA, Referenced to
25℃
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 2.75A
VDS = 50 V, ID = 2.75A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD =200 V,
ID =3.5A
RG=25Ω
(Note4,5)
VDD = 320 V,
VGS = 10 V,
ID = 3.5 A
(Note4,5)
Min
-
±30
-
400
-
2
-
-
-
-
-
-
-
-
-
-
-
-
WFP730
Type
-
-
Max
±100
-
-
1
-
-
Unit
nA
V
μA
V
0.4
-
V/℃
-
4
V
0.83
1
Ω
4.5
-
S
550
720
23
30
pF
85
110
15
40
55
120
85
180
ns
50
110
32
38
4.3
5.7
nC
14
22
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
-
-
IDR = 5.5 A, VGS = 0 V
IDR = 5.5 A, VGS = 0 V,
dIDR / dt = 100 A / μs
Min
-
-
-
-
-
Type
-
-
1.4
265
2.32
Max
5.5
22
1.5
530
-
Unit
A
A
V
ns
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=5.5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤5.5A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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