WFP740 データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFP740 Datasheet PDF : 7 Pages
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Features
� 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 60nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFP740
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL
Maximum lead Temperature for soldering purposes
(Note1)
(Note2)
(Note1)
(Note3)
Value
400
10
6.3
40
±30
450
13
4
134
1.0
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance, Case- to -Sink
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
-
-
0.93
℃/W
-
0.5
-
℃/W
-
-
62
℃/W
Rev.A Sep.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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