WFP740 データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFP740 Datasheet PDF : 7 Pages
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WFP740
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100 nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
IDSS
VDS=400V,VGS=0V
-
-
25
µA
Drain -source breakdown voltage
Break voltage Temperature
Coefficient
V(BR)DSS ID=250 µA,VGS=0V
400
-
△BVDSS/ ID=250µA, Referenced
-
0.4
△TJ
to 25℃
-
V
-
V/℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=5A
-
0.48 0.55 Ω
Forward Transconductance
gfs
VDS=40V,ID=5A
-
9.6
-
S
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
-
1400 1800
-
36
46
pF
-
150
195
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr
VDD=200V,
-
20
50
ton
ID=10A，
tf
RG=25Ω，
-
80
170
ns
-
125
260
toff
(Note4,5) -
85
180
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
VDD=320V,
Qg
-
VGS=10V,
Qgs
ID=10A
-
Qgd
(Note4,5) -
60
71
nC
7
-
27
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=10A,VGS=0V
Reverse recovery time
trr
IDR=10A,VGS=0V,
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
Min Type Max Unit
-
-
10
A
-
-
40
A
-
1.4
1.5
V
-
330
-
ns
-
3.57
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=7.9mH IAS=10A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤10A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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