WFU1N60N データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFU1N60N Datasheet PDF : 7 Pages
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WFU1N60N
Silicon N-Channel MOSFET
Features
■1A,600V, RDS(on)(Max 15.0Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 6.1nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply. electronic
Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
Junction and Storage Temperature
TL
Channel Temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
600
1.0
0.62
4.0
±30
47
3.1
4.5
30
0.24
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min
-
0.5
-
Value
Typ
-
-
-
Max
4.16
-
105
Units
℃/W
℃/W
℃/W
1 /7
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