UTCBT169 データシートの表示（PDF） - Unisonic Technologies
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UTCBT169 Datasheet PDF : 4 Pages
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UTC BT169
PARAMETER
Peak gate power
Average gate power
Storage temperature
Operating junction temperature
SYMBOL
PGM
PG(AV)
Tstg
Tj
CONDITIONS
Over any 20 ms period
SCR
MIN MAX UNIT
2
W
0.1
W
-40 150 °C
125 °C
THERMAL RESISTANCES
PARAMETER
SYMBOL
Thermal resistance junction to lead Rth j-lead
Thermal resistance junction to
Rth j-a
ambient
CONDITIONS
pcb mounted;
lead length=4mm
MIN TYP MAX UNIT
60 K/W
150
K/W
ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise stated)
PARAMETER
SYMBOL
CONDITIONS
MIN
STATIC
Gate trigger current
IGT
VD=12V;IT=10mA;gate
open circuit
Latching current
IL
VD=12V;IGT=0.5mA;
RGK=1kΩ
Holding current
IH
VD=12V;IGT=0.5mA;
RGK=1kΩ
On-state voltage
VT
IT=1A
Gate trigger voltage
VGT
VD=12V;IT=10mA;
gate open circuit
VD=VDRM(max) ;IT=10mA ;
0.2
Tj=125°C; gate open circuit
Off-state leakage current
ID,IR
VD=VDRM(max) ;VR=VRRM(m
ax) ;Tj=125°C;RGK=1kΩ
DYNAMIC
Ciritical rate of rise of off-state
dVD/dt
VDM=67% VDRM(max);
voltage
Tj=125°C; exponential
waveform;RGK=1kΩ
Gate controlled turn-on time
tgt
ITM=2A;VD=VDRM(max);
IG=10mA;dIG/dt=0.1A/µs
Circuit commutated turn-off time
tq
VD=67% VDRM(max) ;
Tj=125°C;ITM=1.6A;VR=35V
;dITM/dt=30A/µs;
VD/dt=2V/µs;RGK=1kΩ
TYP
50
2
2
1.2
0.5
0.3
0.05
25
2
100
MAX UNIT
200 µA
6
mA
5
mA
1.35 V
0.8
V
0.1 mA
V/µs
µs
µs
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
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