XL1002 データシートの表示（PDF） - Mimix Broadband
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XL1002 Datasheet PDF : 8 Pages
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20.0-36.0 GHz GaAs MMIC
Low Noise Amplifier
March 2005 - Rev 01-Mar-05
L1002
App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only
requires a single bias voltage. All DC pads (V1 through V8) are tied together on-chip, even though V1 or V5 are shown as
main connections, any of the eight DC pads may be used to bias the device. Bias is nominally V1 or V5=5V, Id=85 mA.
App Note [2] Bias Arrangement - The DC pad at the top (V1) should be connected to one DC bypass capacitor
(~100-200 pf ) and the DC pad at the bottom (V5) should be connected using another DC bypass capacitor
(~100-200 pf ). Additional DC bypass capacitance (~0.01 pf ) is also recommended. Capacitance should be as close to the
device as possible.
MTTF Table
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
87.7 deg Celsius
110.1 deg Celsius
132.3 deg Celsius
Rth
88.4° C/W
94.9° C/W
100.8° C/W
MTTF Hours
1.56E+10
1.05E+09
9.83E+07
FITs
6.42E-02
9.50E-01
1.02E+01
Bias Conditions: V1 or V5=5.0V, Id=85 mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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