ZVN4206GV データシートの表示（PDF） - Zetex => Diodes

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ZVN4206GV

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Zetex => Diodes 

ZVN4206GV

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

BVDSS 60

V

ID=1mA, VGS=0V

Gate-Source Threshold

Voltage

VGS(th) 1.3 3

V

ID=1mA, VDS= VGS

Gate-Body Leakage

IGSS

100 nA VGS=± 20V, VDS=0V

Zero Gate Voltage Drain

Current

IDSS

10 µA

100 µA

VDS=60V, VGS=0V

VDS=48V, VGS=0V, T=125°C(2)

On-State Drain Current (1)

ID(on)

3

A

VDS=25V, VGS=10V

Static Drain-Source On-State RDS(on)

Resistance (1)

1

Ω

1.5 Ω

VGS=10V, ID=1.5A

VGS=5V, ID=0.5A

Forward Transconductance

gfs

300

(1)(2)

mS VDS=25V,ID=1.5A

Input Capacitance (2)

Common Source Output

Capacitance (2)

Ciss

Coss

100 pF

60 pF

VDS=25V, VGS=0V, f=1MHz

Reverse Transfer Capacitance Crss

(2)

20 pF

Turn-On Delay Time (2)(3)

td(on)

8

ns

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

tr

td(off)

12

ns

VDD ≈25V, ID=1.5A, VGEN

=10V

12 ns

Fall Time (2)(3)

tf

15 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

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