ZVN2106GTA データシートの表示（PDF） - Diodes Incorporated.
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ZVN2106GTA Datasheet PDF : 5 Pages
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 6)
Symbol
VDSS
VGSS
ID
IDM
Value
60
±20
0.71
8
ZVN2106G
Unit
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Operating and Storage Temperature Range
TA =+25°C
Symbol
PD
TJ, TSTG
Value
2
-55 to +150
Unit
W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
On-State Drain Current
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ Max Unit
Test Condition
BVDSS
60
IDSS
-
IGSS
-
ID(ON)
2
-
-
V VGS = 0V, ID = 1mA
-
500
nA VDS = 60V, VGS = 0V
100
µA VDS = 48V, VGS = 0V, TA = +125°C
-
±20
nA VGS = ±20V, VDS = 0V
-
-
A VGS = 10V, VDS = 18V
VGS(TH)
0.8
-
2.4
V VDS = VGS, ID = 1mA
RDS(ON)
-
-
2
Ω VGS = 10V, ID = 1.0A
gfs
0.3
-
-
S VDS = 18V, ID = 1.0A
Ciss
-
Coss
-
Crss
-
tD(ON)
-
tR
-
tD(OFF)
-
tF
-
-
75
pF
-
-
45
20
pF
VDS = 18V, VGS = 0V,
f = 1.0MHz
pF
-
7
ns
-
8
ns VDD = 18V, ID = 1A, VGEN = 10V,
-
12
ns RGS = 50Ω
-
15
ns
Notes:
5. For a device mounted on 50mm x 50mm x 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air condition.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
ZVN2106G
Document number: DS33347 Rev. 4 - 2
2 of 5
www.diodes.com
February 2015
© Diodes Incorporated
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