ZVN4206G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BVDSS 60
V
ID=1mA, VGS=0V
Gate-Source Threshold Voltage VGS(th) 1.3 3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
100 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain Current IDSS
10
µA VDS=60V, VGS=0V
100 µA VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current (1)
ID(on)
3
A
VDS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1)
RDS(on)
1
Ω
1.5 Ω
VGS=10V, ID=1.5A
VGS=5V, ID=0.5A
Forward Transconductance (1)(2) gfs
300
mS VDS=25V,ID=1.5A
Input Capacitance (2)
Ciss
100 pF
Common Source Output
Coss
Capacitance (2)
60
pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss
20
pF
Turn-On Delay Time (2)(3)
td(on)
8
ns
Rise Time (2)(3)
tr
12
ns VDD ≈25V, ID=1.5A, VGEN =10V
Turn-Off Delay Time (2)(3)
td(off)
12
ns
Fall Time (2)(3)
tf
15
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
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