ZVN4206GVTA データシートの表示（PDF） - Diodes Incorporated.
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ZVN4206GVTA Datasheet PDF : 6 Pages
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ZVN4206GV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Drain Current
Continuous Body Diode Current
Avalanche Current - Repetitive
Avalanche Energy - Repetitive
Symbol
VDSS
VGS
ID
IDM
ID
ISD
IAR
EAR
Value
60
±20
1
8
1
600
600
15
Unit
V
V
A
A
A
mA
mA
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at TA= +25°C
Operating and Storage Temperature Range
Symbol
Ptot
TJ, TSTG
Value
2
-55 to +150
Unit
W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol Min
Typ
Max
BVDSS
60
IDSS
—
—
—
10
—
100
Gate-Body Leakage
IGSS
—
—
100
Gate-Source Threshold Voltage
VGS(th)
1.3
—
3
On-State Drain Current (Note 5)
ID(on)
3
—
—
Static Drain-Source On-State Resistance (Note 5)
—
RDS (ON)
—
—
1
—
1.5
Forward Transconductance (Notes 5 & 6)
DYNAMIC CHARACTERISTICS
gfs
300
—
—
Input Capacitance (Note 6)
Ciss
—
—
100
Output Capacitance (Note 6)
Coss
—
—
60
Reverse Transfer Capacitance (Note 6)
Crss
—
—
20
Turn-On Delay Time (Notes 6 & 7)
td(on)
—
—
8
Turn-On Rise Time (Notes 6 & 7)
tr
—
—
12
Turn-Off Delay Time (Notes 6 & 7)
td(off)
—
—
12
Turn-Off Fall Time (Notes 6 & 7)
tf
—
—
15
Notes: 5. Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
6. Sample test.
7. Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator.
Unit
Test Condition
V ID = 1mA, VGS = 0V
VDS = 60V, VGS = 0V
µA VDS = 48V, VGS = 0V , T=+125°C
(Note 6)
nA VGS = ±20V, VDS = 0V
V
ID = 1mA, VDS = VGS
A
VDS = 25V, VGS = 10V
Ω
VGS = 10V, ID = 1.5A
VGS = 5V, ID = 0.5A
ms VDS = 25V, ID = 1.5A
pF
pF
VDS = 25 V, VGS = 0V
f = 1MHz
pF
ns
ns VDD ≈ 25V, VGEN = 10V
ns ID = 1.5A
ns
ZVN4206GV
Datasheet Number: DS33364 Rev. 4 – 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
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