ZVP4424Z データシートの表示（PDF） - Diodes Incorporated.

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ZVP4424Z

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes Incorporated. 

ZVP4424Z

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP MAX. UNIT CONDITIONS.

Drain-Source Breakdown BVDSS

Voltage

-240

V

ID=-1mA, VGS=0V

Gate-Source Threshold

Voltage

VGS(th)

-0.7 -1.4 -2.0 V

ID=-1mA, VDS= VGS

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current

Static Drain-Source

On-State Resistance

Forward

Transconductance (1) (2)

IGSS

IDSS

ID(on)

RDS(on)

gfs

-0.75 -1.0

7.1

8.8

125

100 nA

-10 µA

-100 µA

A

9

Ω

11 Ω

mS

VGS=± 40V, VDS=0V

VDS=-240V, VGS=0V

VDS=-190V, VGS=0V, T=125°C

VDS=-10V, VGS=-10V

VGS=-10V, ID=-200mA

VGS=-3.5V, ID=-100mA

VDS=-10V,ID=-0.2A

Input Capacitance (2)

Ciss

Common Source Output Coss

Capacitance (2)

100 200 pF

18 25 pF

VDS=-25V, VGS=0V, f=1MHz

Reverse Transfer

Crss

Capacitance (2)

5

15 pF

Turn-On Delay Time (2)(3) td(on)

8

15 ns

Rise Time (2)(3)

tr

Turn-Off Delay Time (2)(3) td(off)

8

15

ns

VDD ≈−50V, ID =-0.25A,

26

40

ns

VGEN=-10V

Fall Time (2)(3)

tf

20 30 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device

TYPICAL CHARACTERISTICS

1

0.1

0.01

DC

1s

100ms

10ms

1ms

100µs

0.001

1

10

100

1k

VDS - Drain Source Voltage (V)

Safe Operating Area

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