ZVP4424Z データシートの表示（PDF） - Diodes Incorporated.

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ZVP4424Z

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes Incorporated. 

ZVP4424Z

TYPICAL CHARACTERISTICS

-1.2

-1.0

-0.8

-0.6

300µs Pulsed Test

VGS=-10V

-5V

-4V

-0.4

-3V

-0.2

-2.5V

-2V

0

0

-2

-4

-6

-8

-10

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

400

-1.2

-1.0

-0.8

-0.6

VDS=-10V

300µs Pulsed Test

-0.4

-0.2

0

0

-2

-4

-6

-8

-10

VGS - Gate Source Voltage (Volts)

Transfer Characteristics

400

300

300

200

300µs Pulsed Test

VDS=-10V

100

BI

0

0

-0.2

-0.4

-0.6

-0.8

-1.0

I,- Drain Current (Amps)

Transconductance v drain current

200

300µs Pulsed Test

VDS=-10V

100

BI

0

0

-2

-4

-6

V/5-Gate Source Voltage (Volts)

Transconductance v gate-source voltage

100

VGS=-2V

10

-2.5V

-3V

-10V

300µs Pulsed Test

1

-0.01

-0.1

-1

-10

ID-Drain Current (Amps)

On-resistance vs Drain Current

2.4

VGS=-10V

2.2

ID=0.2A

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

VGS=VDS

0.4

ID=-1mA

0.2

0.0

-50

-25

0

25

50

75 100 125 150

Junction Temperature (°C)

Normalised RDS(on) and V/5JD vs Temperature

3 - 440

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