ZXM64N03X(2005) データシートの表示（PDF） - Zetex => Diodes

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ZXM64N03X
(Rev.:2005)

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM64N03X

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State

Resistance (1)

Forward Transconductance (3)

DYNAMIC (3)

V(BR)DSS

30

IDSS

IGSS

VGS(th)

1.0

RDS(on)

gfs

4.3

V

1 µA

±100 nA

V

0.045 Ω

0.060 Ω

S

ID=-250µA, VGS=0V

VDS=30V, VGS=0V

VGS=± 20V, VDS=0V

I

D

=-25

0

µA

,

VDS=

VGS

VGS=10V, ID=3.7A

VGS=4.5V, ID=1.9A

VDS=10V,ID=-1.9A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

950

pF

200

pF

VDS=25 V, VGS=0V,

f=1MHz

50

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

4.2

4.5

20.5

8

ns

ns

ns

ns

27 nC

5 nC

4.5 nC

VDD =5V, ID=3.7A

RG=6.2Ω, RD=4.0Ω

(Refer to test circuit)

VDS=24V,VGS=10V,

ID=3.7A

(Refer to test circuit)

Diode Forward Voltage (1)

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge(3)

Qrr

0.95 V

24.5

ns

19.1

nC

Tj=25°C, IS=3.7A,

VGS=0V

Tj=25°C, IF=3.7A,

di/dt= 100A/µs

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 1 - OCTOBER 2005

4

SEMICONDUCTORS

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