ZXMN10A09K データシートの表示（PDF） - Diodes Incorporated.
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ZXMN10A09K Datasheet PDF : 8 Pages
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A Product Line of
Diodes Incorporated
ZXMN10A09K
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol Min
Typ
BVDSS
100
⎯
IDSS
⎯
⎯
IGSS
⎯
⎯
VGS(th)
2
⎯
Static Drain-Source On-Resistance (Note 7)
RDS (ON)
⎯
⎯
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
gfs
⎯
10.7
VSD
⎯
0.850
trr
⎯
40
Qrr
⎯
62
Ciss
⎯
1313
Coss
⎯
83
Crss
⎯
56
Qg
⎯
17.2
Qg
⎯
26.0
Qgs
⎯
5.6
Qgd
⎯
7.6
tD(on)
⎯
6.8
tr
⎯
5.3
tD(off)
⎯
27.5
tf
⎯
12.3
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
Max
⎯
1
±100
4
0.085
0.100
⎯
0.950
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Test Condition
V ID = 250μA, VGS = 0V
µA VDS = 100V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
ID = 250μA, VDS = VGS
VGS = 10V, ID = 4.6A
Ω
VGS = 6V, ID = 4.2A
S VDS = 15V, ID = 4.6A
V IS = 4.7A, VGS = 0V
ns
nC IS = 3.0A, di/dt = 100A/μs
pF
pF
VDS = 50V, VGS = 0V
f = 1MHz
pF
nC VGS = 6V
nC
nC VGS = 10V
nC
VDS = 50V,
ID = 4.6A
ns
ns VDD = 50V, VGS = 10V
ns ID = 1.0A, RG ≅ 25Ω
ns
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
4 of 8
www.diodes.com
January 2010
© Diodes Incorporated
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