ZXMN6A09DN8TC データシートの表示（PDF） - Zetex => Diodes

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ZXMN6A09DN8TC

DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN6A09DN8

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS 60

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

1.0

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (3)

gfs

15

DYNAMIC (3)

V

1

µA

100

nA

V

0.045 Ω

0.075 Ω

S

ID=250µA, VGS=0V

VDS=60V, VGS=0V

VGS=±20V, VDS=0V

I =250µA,

D

VDS=

VGS

VGS=10V, ID=8.2A

VGS=4.5V, ID=7.4A

VDS=15V,ID=8.2A

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING(2) (3)

1407

121

59

pF

VDS=40 V, VGS=0V,

pF f=1MHz

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Charge

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qg

Qgs

Qgd

4.9

5.0

25.3

4.6

12.4

24.2

5.2

3.5

ns

ns VDD =15V, ID=3.5A

ns

RG=6.0Ω, VGS=10V

(refer to test

ns circuit)

nC VDS=15V,VGS=5V,

ID=3.5A

nC

VDS=15V,VGS=10V,

nC ID=3.5A

nC

Diode Forward Voltage (1)

VSD

0.85 0.95

Reverse Recovery Time (3)

trr

26.3

Reverse Recovery Charge (3)

Qrr

26.6

NOTES

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

V

TJ=25°C, IS=6.6A,

VGS=0V

ns TJ=25°C, IF=3.5A,

di/dt= 100A/µs

nC

PROVISIONAL ISSUE D - AUGUST 2001

4

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