ZXMN4A06K
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current:
VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed drain current (c)
Continuous source current (body diode)
(b)
Symbol
VDSS
VGS
ID
IDM
IS
Pulsed source current (body diode) (c)
ISM
Power dissipation at TA=25°C (a)
PD
Linear derating factor
Power dissipation at TA=25°C (b)
PD
Linear derating factor
Power dissipation at TA=25°C (d)
PD
Linear derating factor
Operating and storage temperature range Tj:Tstg
Thermal resistance
Parameter
Symbol
Junction to ambient (a)
R⍜JA
Junction to ambient (b)
R⍜JA
Junction to ambient (d)
R⍜JA
Limit
40
Ϯ20
10.9
8.7
7.2
35.3
10.8
35.3
4.2
33.6
9.5
76
2.15
17.2
-55 to +150
Value
30
13.2
58
Unit
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 1 - March 2006
2
© Zetex Semiconductors plc 2005
www.zetex.com