ZXMP10A16K データシートの表示（PDF） - Zetex => Diodes

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ZXMP10A16K

100V DPAK P-channel enhancement mode MOSFET

Zetex => Diodes 

ZXMP10A16K

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol Min.

Static

Drain-source breakdown

voltage

V(BR)DSS -100

Zero gate voltage drain current IDSS

Gate-body leakage

IGSS

Gate-source threshold voltage VGS(th) -2.0

Static drain-source on-state

resistance (*)

RDS(on)

Forward transconductance(*) (‡) gfs

Dynamic(‡)

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

Switching (†) (‡)

Turn-on-delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Total gate charge

Qg

Gate-source charge

Qgs

Gate drain charge

Qgd

Source-drain diode

Typ. Max. Unit Conditions

V ID= 250␮A, VGS=0V

-1

␮A VDS= -100V, VGS=0V

100 nA VGS=±20V, VDS=0V

-4.0 V ID= -250␮A, VDS=VGS

0.235 W VGS= -10V, ID= -2.1A

0.285

VGS= -6V, ID= -1.9A

4.7

S VDS= -15V, ID= -2.1A

717

55.3

46.4

pF VDS= -50V, VGS=0V

pF f=1MHz

pF

4.3

5.2

20

12.1

16.5

2.47

5.36

ns VDD= -50V, ID= -1A

ns RG=6.0⍀, VGS= -10V

ns

ns

nC VDS= -50V, VGS= -10V

nC ID= -2.1A

nC

Diode forward voltage(*)

VSD

Reverse recovery time(‡)

trr

Reverse recovery charge(‡)

Qrr

-0.85 -0.95

43.3

76.5

V Tj=25°C, IS= -3.35A,

VGS=0V

ns Tj=25°C, IS= -2.4A,

nC di/dt=100A/␮s

NOTES:

(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Issue 1 - October 2006

4

© Zetex Semiconductors plc 2006

www.zetex.com

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