ZXMN6A08K データシートの表示（PDF） - Diodes Incorporated.
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ZXMN6A08K Datasheet PDF : 8 Pages
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Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
TA=70°C (Note 3)
(Note 2)
(Note 4)
(Note 3)
(Note 4)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
A Product Line of
Diodes Incorporated
ZXMN6A08K
Value
Unit
60
V
±20
V
7.90
6.30
A
5.36
24.3
A
9.0
A
24.3
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 2)
(Note 3)
(Note 5)
(Note 2)
(Note 3)
(Note 5)
(Note 6)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
4.13
33.0
8.94
71.5
2.12
16.9
30.3
14.0
59.1
2.77
-55 to 150
Unit
W
mW/°C
°C/W
°C
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN6A08K
Document Revision: 2
2 of 8
www.diodes.com
July 2009
© Diodes Incorporated
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