ZXMN3A04K データシートの表示（PDF） - Diodes Incorporated.

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ZXMN3A04K

30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK

Diodes Incorporated. 

ZXMN3A04K

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-source voltage

Gate-source voltage

Continuous drain current @ VGS=10V; TA=25°C (b)

@ VGS=10V; TA=70°C (b)

@ VGS=10V; TA=25°C (a)

Pulsed drain current (c)

Continuous source current (body diode) (b)

Pulsed source current (body diode) (c)

Power dissipation at TA =25°C (a)

Linear derating factor

Power dissipation at TA =25°C (b)

Linear derating factor

Power dissipation at TA =25°C (d)

Linear derating factor

Operating and storage temperature range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

PD

Tj, Tstg

LIMIT

30

±20

18.4

14.7

12.0

66

11.5

66

4.3

34.4

10.1

80.8

2.15

17.2

-55 to +150

UNIT

V

V

A

A

A

A

A

A

W

mW/°C

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to ambient (a)

Junction to ambient (b)

Junction to ambient (d)

R⍜JA

R⍜JA

R⍜JA

29

°C/W

12.3

°C/W

58

°C/W

NOTES

(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.

(b) For a device surface mounted on FR4 PCB measured at Յ 10 sec.

(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300␮s - pulse width limited by maximum junction temperature.

(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

SEMICONDUCTORS

ISSUE 1 - FEBRUARY 2004

2

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