ZXMN3A04K データシートの表示（PDF） - Diodes Incorporated.

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ZXMN3A04K

30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK

Diodes Incorporated. 

ZXMN3A04K

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-source breakdown voltage

V(BR)DSS

Zero gate voltage drain current

IDSS

Gate-body leakage

IGSS

Gate-source threshold voltage

VGS(th)

Static drain-source on-state resistance (1) RDS(on)

Forward transconductance (1) (3)

gfs

DYNAMIC (3)

30

V ID= 250␮A, VGS=0V

0.5 ␮A VDS= 30V, VGS=0V

100 nA VGS=±20V, VDS=0V

1.0

V ID= 250mA, VDS=VGS

0.02 ⍀ VGS= 10V, ID= 12A

0.03 ⍀ VGS= 4.5V, ID = 9.8A

22.1

S VDS= 15V, ID= 12.6A

Input capacitance

Output capacitance

Reverse transfer capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

1890

349

218

pF

pF VDS= 15V, VGS=0V

f=1MHz

pF

Turn-on-delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Total gate charge

Gate-source charge

Gate drain charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qg

Qgs

Qgd

5.2

6.1

38.1

20.2

19.9

36.8

5.8

7.1

ns

ns VDD= 15V, ID= 1A

ns RG≅6.0⍀, VGS= 10V

ns

nC VDS= 15V, VGS= 5V

ID= 6.5A

nC

VDS= 15V, VGS= 10V

nC

ID= 6.5A

nC

Diode forward voltage (1)

VSD

Reverse recovery time (3)

trr

Reverse recovery charge (3)

Qrr

0.85 0.95

18.4

11

V Tj=25°C, IS= 6.8A,

VGS=0V

ns Tj=25°C, IS= 2.3A,

nC di/dt=100A/␮s

NOTES

(1) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

SEMICONDUCTORS

ISSUE 1 - FEBRUARY 2004

4

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