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1.5KA39AHE3/54 データシートの表示(PDF) - Unspecified

部品番号
コンポーネント説明
メーカー
1.5KA39AHE3/54
ETC
Unspecified ETC
1.5KA39AHE3/54 Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
1.5KA6.8 thru 1.5KA47A
Vishay General Semiconductor
PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
Case Style 1.5KA
PRIMARY CHARACTERISTICS
VWM
VBR
PPPM
PD
IFSM
TJ max.
Polarity
5.5 V to 40.2 V
6.8 V to 47 V
1500 W
6.5 W
200 A
185 °C
Uni-directional
Package
1.5KE
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive and telecommunication.
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• 1500 W peak pulse power capability with a 10/1000 μs
waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
Peak pulse current at TA = 25 °C with a 10/1000 μs waveform (1) (fig. 3)
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half sine-wave (2)
Maximum instantaneous forward voltage at 100 A (2)
PPPM
IPPM
PD
IFSM
VF
1500
See next table
6.5
200
3.5
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 185
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
UNIT
W
A
W
A
V
°C
Revision: 09-Feb-11
1
Document Number: 88300
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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