1N5417TR データシートの表示（PDF） - Unspecified
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1N5417TR Datasheet PDF : 5 Pages
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www.vishay.com
1N5417, 1N5418
Vishay Semiconductors
180
VR = VRRM
160
140
120
100
PR-Limit
at 100 % VR
80
60
PR-Limit
40
at 80 % VR
20
0
25
16390
50 75 100 125 150 175
Tj - Junction Temperature (°C)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
120
f = 1 MHz
100
80
60
40
20
0
0.1
1
10
100
16391
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
100
tp/T = 0.5
0.2
10
0.1
0.05
0.02
0.01
1
10-4
10-3
949562
10-2
10-1
10-0
101
102
tp - Pulse Length (s)
Fig. 7 - Thermal Response
VRRM = 600 V
RthJA = 70 K/W
Tamb = 25 °C
100 °C
70 °C
45 °C
100
101
102
IFRM - Repetitive Peak
Forward Current (A)
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 1.5, 21-Feb-18
3
Document Number: 86097
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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