KIT8020CRD8FF1217P-1 データシートの表示（PDF） - Cree, Inc

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KIT8020CRD8FF1217P-1

CREE Silicon Carbide MOSFET Evaluation Kit

Cree, Inc 

CREE Silicon Carbide MOSFET Evaluation Kit

KIT8020CRD8FF1217P-1

Features:

 Includes all the power stage parts needed to quickly

assemble a CREE MOSFET and diode based power

converter and get started with SiC devices.

 Easy to use assembly to evaluate CREE MOSFET and

Diode performance in a half bridge circuit.

 Easily configurable to different power conversion

topologies such as Buck or Boost configurations.

 Easy access to critical test points for measurement

including VGS, VDS and IDS.

 Good layout example for properly driving MOSFET and

diode with minimal ringing.

 Gate drive schematic and layout reference for a TO-247

packaged CREE MOSFET.

 Comparative testing between CREE devices and IGBTs.

Some assembly Required

Description:

This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE

Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs

and two 1200V 20A schottky diodes; a half bridge configured evaluation board that includes isolated gate drivers

and power supplies and all the other components needed to quickly assemble the half bridge power stage . The

basic block diagram and specifications are shown below. The assembly can be easily configured for several

topologies from the basic phase-leg configuration to several other common topologies as shown in the next

section. Additional topologies like H-bridge and 3-phase inverter are possible with two or more of the evaluation

kits.

Evaluation Board details

 900V max.

 10kW /w a cooling fan

 > 300 kHz

 +12V aux supply

 2 input PWM channels

Subject to change without notice.

www.cree.com

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