BAS116H データシートの表示（PDF） - NXP Semiconductors.

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BAS116H

Low leakage switching diode

NXP Semiconductors. 

BAS116H

Low leakage switching diode

Rev. 3 — 31 May 2011

Product data sheet

1. Product profile

1.1 General description

Low leakage switching diode, encapsulated in a SOD123F small and flat lead

Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

 Small and flat lead SMD plastic package

 Low leakage current

 Excellent coplanarity and improved thermal behavior

 AEC-Q101 qualified

1.3 Applications

 General-purpose switching

1.4 Quick reference data

Table 1.

Symbol

IF

IR

VR

trr

Quick reference data

Parameter

forward current

reverse current

reverse voltage

reverse recovery time

Conditions

VR = 75 V

Min

[1][2] -

-

-

[3] -

Typ Max Unit

-

215 mA

0.003 5.0 nA

-

75

V

0.8 3.0 s

[1] Pulse test: tp  300 s;   0.02.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.

2. Pinning information

Table 2.

Pin

1

2

Pinning

Description

cathode

anode

[1] The marking bar indicates the cathode.

Simplified outline

[1]

1

2

Graphic symbol

1

2

sym001

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