BAS116H データシートの表示（PDF） - NXP Semiconductors.
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BAS116H Datasheet PDF : 10 Pages
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Nexperia
BAS116H
Low leakage switching diode
300
IF
(mA)
200
100
mlb752
(1) (2)
(3)
102
IFSM
(A)
10
1
mbg704
0
0
0.4
0.8
1.2
1.6
VF (V)
(1) Tamb = 150 C; typical values
(2) Tamb = 25 C; typical values
(3) Tamb = 25 C; maximum values
Fig 1. Forward current as a function of forward
voltage
102
IR
(nA)
10
(1)
mlb754
1
10−1
10−2
(2)
10−3
0
50
100
150
200
Tj (°C)
VR = 75 V
(1) Maximum values
(2) Typical values
Fig 3. Reverse current as a function of junction
temperature
10−1
1
10
102
103
104
tp (μs)
Based on square wave currents
Tj = 25 C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg526
2
Cd
(pF)
1
0
0
5
10
Tamb = 25 C; f = 1 MHz
15
20
VR (V)
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS116H
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 31 May 2011
© Nexperia B.V. 2017. All rights reserved
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