BAS116H データシートの表示（PDF） - NXP Semiconductors.

部品番号

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BAS116H

Low leakage switching diode

NXP Semiconductors. 

Nexperia

8. Test information

BAS116H

Low leakage switching diode

RS = 50 Ω

V = VR + IF × RS

D.U.T.

IF

SAMPLING

OSCILLOSCOPE

Ri = 50 Ω

VR

mga881

tr

tp

10 %

90 %

input signal

(1) IR = 1 mA

Fig 5. Reverse recovery time test circuit and waveforms

t

+ IF

trr

t

(1)

output signal

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

9. Package outline

3.6 2.7

3.4 2.5

1.7

1.5

1

1.2

1.0

0.55

0.35

Dimensions in mm

Fig 6. Package outline SOD123F

2

0.70

0.55

0.25

0.10

04-11-29

10. Packing information

BAS116H

Product data sheet

Table 8. Packing methods

The -xxx numbers are the last three digits of the 12NC ordering code.[1]

Type number Package Description

BAS116H

SOD123F 4 mm pitch, 8 mm tape and reel

Packing quantity

3 000

10 000

-115

-135

[1] For further information and the availability of packing methods, see Section 14.

All information provided in this document is subject to legal disclaimers.

Rev. 3 — 31 May 2011

© Nexperia B.V. 2017. All rights reserved

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