74V2G00CTR データシートの表示（PDF） - STMicroelectronics

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74V2G00CTR

DUAL 2-INPUT NAND GATE

STMicroelectronics 

74V2G00

s HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V

s LOW POWER DISSIPATION:

ICC = 1µA(MAX.) at TA=25°C

s HIGH NOISE IMMUNITY:

VNIH = VNIL = 28% VCC (MIN.)

s POWER DOWN PROTECTION ON INPUTS

s SYMMETRICAL OUTPUT IMPEDANCE:

|IOH| = IOL = 8mA (MIN)

s BALANCED PROPAGATION DELAYS:

tPLH ≅ tPHL

s OPERATING VOLTAGE RANGE:

VCC(OPR) = 2V to 5.5V

s IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The V2G00 is an advanced high-speed CMOS

SINGLE 2-INPUT NAND GATE fabricated with

sub-micron silicon gate and double-layer metal

wiring C2MOS tecnology.

The internal circuit is composed of 3 stages

including buffer output, which provide high noise

immunity and stable output.

DUAL 2-INPUT NAND GATE

PRELIMINARY DATA

SOT23-8L

SOT323-8L

ORDER CODES

PACKAGE

SOT23-8L

SOT323-8L

T&R

74V2G00STR

74V2G00CTR

Power down protection is provided on all inputs

and 0 to 7V can be accepted on inputs with no

regard to the supply voltage. This device can be

used to interface 5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

November 2001

1/9

This is preliminary information on a new product now in development are or undergoing evaluation. Details subject to change without notice.

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