TSM2N7002K データシートの表示（PDF） - TSC Corporation
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TSM2N7002K Datasheet PDF : 7 Pages
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TSM2N7002K
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamicb
VGS =0V, ID =250µA
VDS =VGS, ID =250µA
VGS =±20V, VDS =0V
VDS =60V, VGS =0V
VGS =10V, ID =300mA
VGS =4.5V, ID =100mA
VDS =10V, ID =200mA
IS =300mA, VGS =0V
BVDSS
VGS(TH)
IGSS
IDSS
RDS(ON)
gfs
VSD
Total Gate Charge
VDS =10V, ID = 250mA,
VGS =4.5V
Qg
Input Capacitance
Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ciss
Coss
Reverse Transfer Capacitance
Crss
Switchingc
Turn-On Delay Time
VDD =30V, RG =10Ω
td(on)
Turn-Off Delay Time
Notes:
ID =200mA, VGEN =10V,
td(off)
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Min
60
1.0
--
--
--
--
100
--
--
--
--
--
--
--
Typ
--
1.5
--
--
1.2
2
--
0.8
0.4
30
6
2.5
--
--
Max Unit
--
V
2.5
V
±10
uA
1.0
uA
2
Ω
4
--
mS
1.4
V
0.6
nC
--
--
pF
--
25
nS
35
2/7
Version: C11
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