2SA1941(2006) データシートの表示（PDF） - Toshiba
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2SA1941 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
2SA1941
Unit: mm
• High breakdown voltage: VCEO = −140 V (min)
• Complementary to 2SC5198
• Recommended for 70-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−140
V
Collector-emitter voltage
VCEO
−140
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−10
A
Base current
IB
−1
A
Collector power dissipation
(Tc = 25°C)
PC
100
W
JEDEC
―
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 4.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
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