UMF6NTR(2008) データシートの表示（PDF） - ROHM Semiconductor
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UMF6NTR Datasheet PDF : 7 Pages
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Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
−15
V
Collector-emitter voltage
VCEO
−12
V
Emitter-base voltage
VEBO
−6
V
Collector current
Power dissipation
IC
−500
mA
ICP
−1.0
A ∗1
PC 150(TOTAL) mW ∗2
Junction temperature
Tj
150
°C
Range of storage temperature Tstg −55 to +150 °C
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Tr2
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
VDSS
30
V
VGSS
±20
V
Drain current
Continuous
Pulsed
Reverse drain
current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
ID
IDP
IDR
IDRP
PD
Tch
Tstg
100
200
100
200
150(TOTAL)
150
−55 to +150
mA
mA ∗1
mA
mA ∗1
mW ∗2
°C
°C
∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
UMF6N
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector-base breakdown voltage
BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Transition frequency
fT
Collector output capacitance
Cob
Tr2
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
RDS(on)
|Yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min. Typ. Max. Unit
Conditions
−12
−
−
V IC=−1mA
−15
−
−
V IC=−10µA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−15V
−
−
−100 nA VEB=−6V
− −100 −250 mV IC=−200mA, IB=−10mA
270
−
680
− VCE=−2V, IC=−10mA
−
260
−
MHz VCE=−2V, IE=10mA, f=100MHz
−
6.5
−
pF VCB=−10V, IE=0mA, f=1MHz
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Unit
Conditions
µA VGS=±20V, VDS=0V
V ID=10µA, VGS=0V
µA VDS=30V, VGS=0V
V VDS=3V, ID=100µA
Ω ID=10mA, VGS=4V
Ω ID=1mA, VGS=2.5V
ms VDS=3V, ID=10mA
pF
pF VDS=5V, VGS=0V, f=1MHz
pF
ns
ns ID=10mA, VDD 5V,
VGS=5V, RL=500Ω,
ns RGS=10Ω
ns
Rev.B
2/5
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