DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SC26320R データシートの表示(PDF) - Panasonic Corporation

部品番号
コンポーネント説明
メーカー
2SC26320R
Panasonic
Panasonic Corporation Panasonic
2SC26320R Datasheet PDF : 3 Pages
1 2 3
Transistors
2SC2632
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1124
5.9±0.2
Unit: mm
4.9±0.2
Features
Satisfactory linearity of forward current transfer ratio hFE
High collector-emitter voltage (Base open) VCEO
0.7±0.1
Small collector output capacitance (Common base, input open cir-
cuited) Cob
/ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
150
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
150
V
sta tinu Emitter-base voltage (Collector open) VEBO
5
V
a e cycle iscon Collector current
IC
50
mA
life d, d Peak collector current
ICP
100
mA
n u duct type Collector power dissipation
PC
1
W
te tin Pro ued Junction temperature
Tj
150
°C
four ntin Storage temperature
Tstg 55 to +150 °C
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1: Emitter
123
2: Collector
3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
in n es follopwliannged disco Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
150
V
tinu nan Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
M is iscon ainte Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0
1
µA
e/D e, m Forward current transfer ratio *
hFE VCE = 5 V, IC = 10 mA
130
330
D anc typ Collector-emitter saturation voltage
VCE(sat) IC = 30 mA, IB = 3 mA
1
V
inten ance Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
160
MHz
Ma ten Collector output capacitance
ain (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
3
pF
(planed m Noise voltage
NV VCE = 10 V, IC = 1 mA, GV = 80 dB
Rg = 100 k, Function = FLAT
150 300 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE
130 to 220 185 to 330
Publication date: February 2003
SJC00118BED
1

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]