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2SC3707 データシートの表示(PDF) - Panasonic Corporation

部品番号
コンポーネント説明
メーカー
2SC3707
Panasonic
Panasonic Corporation Panasonic
2SC3707 Datasheet PDF : 3 Pages
1 2 3
Transistors
2SC3707
Silicon NPN epitaxial planar type
For UHF amplification
Unit: mm
Features
Possible with the small current and low voltage
0.40+–00..0150
3
0.16+–00..0160
High transition frequency fT
Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
1
2
packing
(0.95) (0.95)
1.9±0.1
/ Absolute Maximum Ratings Ta = 25°C
2.90+–00..0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
10
V
c e. d ty Collector-emitter voltage (Base open) VCEO
7
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
2
V
a e cle con Collector current
IC
10
mA
lifecy , dis Collector power dissipation
PC
50
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg 55 to +150 °C
Marking Symbol: 2X
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
in n s followlianngefdoudriscontinu Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1.5 V, IC = 0
M is con inten Forward current transfer ratio
hFE VCE = 1 V, IC = 1 mA
/Dis ma Transition frequency
fT
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
ce pe, Collector output capacitance
D nan e ty (Common base, input open circuited)
Cob VCB = 1 V, IE = 0, f = 1 MHz
1
µA
1
µA
50
150
4
GHz
0.4
pF
ainte nanc Forward transfer gain
M inte Maximum unilateral power gain
d ma Noise figure
S21e2
GUM
NF
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
6.0
dB
15
dB
3.5
dB
(plane Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Handle the product with care because this is sensitive to the electrostatic breakdown by its structure
Publication date: February 2003
SJC00135BED
1

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