AP73T03GH データシートの表示（PDF） - Advanced Power Electronics Corp
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AP73T03GH Datasheet PDF : 5 Pages
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Advanced Power
Electronics Corp.
AP73T03GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP73T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP73T03GJ) are available for low-profile
applications.
BVDSS
RDS(ON)
ID
30V
9mΩ
55A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30
V
+20
V
55
A
39
A
160
A
50
W
-55 to 175
℃
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3
62.5
110
Units
℃/W
℃/W
℃/W
1
201412043
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