2SK2221 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SK2221

Silicon N Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2220, 2SK2221

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

2SK2220

2SK2221

Gate to source voltage

Drain current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Note 1. Value at Tc = 25 °C

Symbol

VDSX

VGSS

ID

I DR

Pch*1

Tch

Tstg

Ratings

Unit

180

V

200

±20

V

8

A

8

A

100

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source 2SK2220

V(BR)DSX

180

—

breakdown

voltage

2SK2221

200 —

Gate to source breakdown

voltage

V(BR)GSS

±20

—

Gate to source cutoff voltage VGS(off)

0.15 —

Drain to source saturation

VDS(sat)

—

—

voltage

Forward transfer admittance |yfs|

0.7 1.0

Input capacitance

Ciss

—

600

Output capacitance

Coss —

800

Reverse transfer capacitance Crss

—

8

Turn-on time

Turn-off time

Note 1. Pulse Test

t on

—

250

t off

—

90

Max Unit

—

V

—

—

V

1.45 V

12

V

1.4 S

—

pF

—

pF

—

pF

—

ns

—

ns

Test conditions

ID = 10 mA, VGS = –10 V

IG = ±100 µA, VDS = 0

ID = 100 mA

VDS = 10 V

ID = 8 A, VGD = 0 V*1

ID = 3 A

VDS = 10 V*1

VGS = –5 V

VDS = 10 V

f = 1 MHz

VDD = 30 V

ID = 4 A

2

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