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2SK3568(2006) データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SK3568
(Rev.:2006)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
2SK3568 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
2.5
COMMON SOURCE
PULSE TEST
2.0
1.5
1.0
VGS
=
10 V
0.5
ID
=
12A
6
3
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3568
I
DR
– V
DS
100
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
1
10
5
3
1
VGS
=
0,
−
1 V
0.1
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0 −
1.2
DRAIN-SOURCE VOLTAGE V
DS
(V)
10000
1000
100
CAPACITANCE – V
DS
Ciss
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
50
40
30
20
10
0
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
VDS
400
16
300
12
400
VDD
=
100 V
200
8
200
Common source
VGS
100
ID
=
12 A
Tc
=
25°C
4
Pulse test
0
0
0
10
20
30
40
50
60
TOTAL GATE CHARGE Q
g
(nC)
4
2006-11-06
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