2SD1628G-TD-E データシートの表示（PDF） - ON Semiconductor
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2SD1628G-TD-E Datasheet PDF : 6 Pages
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2SD1628
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm)
Ratings
Unit
500 mW
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
ton
tstg
tf
Conditions
VCB=50V, IE=0A
VEB=5V, IC=0A
VCE=2V, IC=0.5A
VCE=2V, IC=3A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=3A, IB=60mA
IC=3A, IB=60mA
See specified Test Circuit.
Ratings
min
typ
120*
95
120
45
30
300
40
max
100
100
560*
500
1.5
Unit
nA
nA
MHz
pF
mV
V
ns
ns
ns
* : The 2SD1628 is classified by 0.5A hFE as follows :
Rank
E
F
G
hFE
120 to 200
160 to 320
280 to 560
Switching Time Test Circuit
PW=10μs
IB1
D.C.=2%
tr, tf ≤ 7ms
IB2
INPUT
1Ω
200VR
50Ω
1μF+
1μF+
OUTPUT
5Ω
VBE= --5V
VCC=10V
IC=10IB1= --10IB2=2A
Ordering Information
Device
2SD1628G-TD-E
2SD1628G-TD-H
2SD1628F-TD-E
2SD1628F-TD-H
Package
PCP
PCP
PCP
PCP
5 pulse
4
IC -- VCE
60mA 40mA
30mA
20mA
3
15mA
10mA
2
5mA
1
0
IB=0
0
0.2
0.4
0.6
0.8
1.0
Collector-to-Emitter Current, VCE -- V ITR10003
Shipping
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
2.0
1.6
1.2
0.8
0.4
memo
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
IC -- VCE
8mA
pulse
6mA
4mA
2mA
0
IB=0
0
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V ITR10004
No.1781-2/6
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