2SD2150(RevA) データシートの表示（PDF） - ROHM Semiconductor

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2SD2150
(Rev.:RevA)

Low Frequency Transistor (20V, 3A)

ROHM Semiconductor 

Transistors

2SD2150

Low Frequency Transistor (20V, 3A)

2SD2150

zFeatures

1) Low VCE(sat).

VCE(sat) = 0.2V(Typ.)

（IC / IB = 2A / 0.1A）

2) Excellent current gain characteristics.

3) Complements the 2SB1424.

zStructure

Epitaxial planar type

NPN silicon transistor

zExternal dimensions (Unit : mm)

2SD2150

4.5+−00..21

1.6±0.1

1.5−+00..12

(1) (2) (3)

0.4±0.1

1.5±0.1

0.5±0.1

3.0±0.2

0.4±0.1

1.5±0.1

0.4−+00..015

(1) Base

ROHM : MPT3

(2) Collector

EIAJ : SC-62

(3) Emitter

∗ Abbreviated symbol: CF

∗ Denotes hFE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

Collector current

IC

Collector power dissipation

PC

Junction temperature

Tj

Storage temperature

Tstg

∗1 Single pulse Pw=10ms

∗2 Mounted on a 40×40×0.7mm Ceramic substrate.

Limits

40

20

6

3

5

0.5

2

150

−55 to +150

Unit

V

V

V

A (DC)

A (Pulse) ∗1

W

W ∗2

°C

°C

Rev.A

1/3

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